Office of Technology Transfer – University of Michigan

Top Anode AMOLED Pixel Structure with Annular TFT

Technology #3571

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Jerzy Kanicki
Managed By
Joohee Kim
Licensing Specialist, Physical Sciences & Engineering 734-764-8202

Inverted stagger hydrogenated amorphous silicon (a-Si:H) Corbino thin film transistors (TFTs) were fabricated with a 5-photomask process used in the processing of the active-matrix liquid crystal displays (AM-LCDs). We investigated the asymmetric electrical characteristics of a-Si:H Corbino TFT under different bias conditions To extract the electrical device parameters, we developed an asymmetric effective channel width concept. Current-voltage measurement indicates that the ON-OFF current ratio changes significantly while the field-effect mobility and the threshold voltage showed the identical value.