A spin-on UV-curable material system for nanoimprint lithography (NIL) has been developed at the University of Michigan. Nanoimprint lithography is a promising alternative to photolithography in integrated circuit manufacturing, and offers the possibility of molecular scale replication with high precision and accuracy, and high throughput at low cost. However, the success of nanoimprint lithography rests on the development of advanced materials that can act as nanoimprint resists.
The UV-curable material system developed at the University of Michigan is based on a photocurable silsesquioxane (SSQ) resin material that can be used as a resist for nano- and micro-imprinting lithography using simple contact exposure tools. The resist can be spin-coated onto a variety of substrates with high uniformity and precisely controlled thickness. The low viscosity SSQ resin allows for fast imprinting under low pressure and low temperature (e.g., room temperature). The resin also provides high dry etching resistance during the reactive-ion etching (RIE) process and makes separation of the cured film from the mask easier. Further, due to its high modulus after cure, the resin material allows for the fabrication of nano and micro features with high aspect ratios, and at high throughput rates.
- Nanoimprint lithography for electronics, photonics, optical and magnetic recordings, and biotechnology
- High uniformity and precise thickness spin-coatings
- Fast imprinting at low pressure and temperature
- High dry etching resistance
- Easy separation of cured film from mask
- High aspect ratio features
- High throughput rates