Office of Technology Transfer – University of Michigan

Complimentary Zn0\ZnTe Polycrystalline Thin Film Transistor Circuits

Technology #4337

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Researchers
Jamie Phillips
Managed By
Keith Hughes
Assistant Director, Physical Sciences & Engineering 734-764-9429

Complementary ZnO/ZnTe Polycrystalline Thin Film Transistor Circuits

Researchers at the University of Michigan have developed complementary circuits based on ZnO and ZnTe polycrystalline transistors targeted towards low cost and large area electronics. Typically, low cost and large area electronics for applications such as flat panel displays and flexible electronics are based on amorphous silicon or organic semiconductors. However, amorphous silicon and organic semiconductors suffer from relatively low carrier mobilities, current handling capacities, and switching speeds.

Design Details

The complementary circuits based on n-channel ZnO and p-channel ZnTe polycrystalline transistors overcome the shortcomings of existing technologies like amorphous silicon or organic semiconductors. The proposed polycrystalline thin film transistors based on compound semiconductors demonstrate higher carrier mobilities and current handling capacities, and improved switching speeds. Further, the transistors can be deposited at low temperatures on a variety of substrates. The combination of polycrystalline II-VI semiconductors represents a set of compatible materials with large, and nearly balanced electron and hole mobilities.

Applications and Advantages

Applications

  • Low cost and large area electronics
  • Flat panel displays
  • Flexible electronics

Advantages

  • Higher carrier mobility
  • Increased current handling capacity
  • Improved switching speed
  • Low temperature deposition on variety of substrates
  • Large, nearly balanced electron and hole mobilities