Complementary ZnO/ZnTe Polycrystalline Thin Film Transistor Circuits
Researchers at the University of Michigan have developed complementary circuits based on ZnO and ZnTe polycrystalline transistors targeted towards low cost and large area electronics. Typically, low cost and large area electronics for applications such as flat panel displays and flexible electronics are based on amorphous silicon or organic semiconductors. However, amorphous silicon and organic semiconductors suffer from relatively low carrier mobilities, current handling capacities, and switching speeds.
The complementary circuits based on n-channel ZnO and p-channel ZnTe polycrystalline transistors overcome the shortcomings of existing technologies like amorphous silicon or organic semiconductors. The proposed polycrystalline thin film transistors based on compound semiconductors demonstrate higher carrier mobilities and current handling capacities, and improved switching speeds. Further, the transistors can be deposited at low temperatures on a variety of substrates. The combination of polycrystalline II-VI semiconductors represents a set of compatible materials with large, and nearly balanced electron and hole mobilities.
Applications and Advantages
- Low cost and large area electronics
- Flat panel displays
- Flexible electronics
- Higher carrier mobility
- Increased current handling capacity
- Improved switching speed
- Low temperature deposition on variety of substrates
- Large, nearly balanced electron and hole mobilities