Office of Technology Transfer – University of Michigan

Multi-bit nonvolatile memory using plasma doping

Technology #6036

Questions about this technology? Ask a Technology Manager

Download Printable PDF

Xiaogan Liang
Managed By
Joohee Kim
Licensing Specialist, Physical Sciences & Engineering 734-764-8202
Patent Protection
US Patent Pending
US Patent Pending

Researchers at the University of Michigan have developed a new multi-bit solid state memory without charging layers or floating gates. Current transistor-based memory relies on floating gate structures that require precise fabrication and multilayer deposition. Furthermore, prototype technologies to improve multi-bit capabilities commonly rely on nanowire, memristor, or organic semiconductor materials that have poor performance and scalability.

Plasma doping creates multiple conduction levels

By using plasma doping on traditional 2D semiconductors, a multilevel transistor can be created with conduction levels controlled by set voltage pulses to the gate electrode. A prototype demonstrating 10 discernible data levels has been produced with robust and enduring data retention. The new technology allows for lower cost mass production of high density semiconductor memory that will enable higher capacity devices as well cheap, disposable electronic memory.


  • High capacity solid state memory
  • Disposable electronic memory
  • Non-binary memory storage for scientific computing


  • Simplified, scalable manufacturing process will significantly reduce costs
  • Robust multi-level data storage performs competitively with existing products
  • Reduced device architecture complexity enables new disposable electronic memory